Taking a transdisciplinary approach drawn from several intellectual streams that include physics, epidemiology, medicine, environment, risk assessment, and various disciplines of engineering, this book ventures into the conflicting studies to access research on bioeffects and therapeutic applications of EM energy. It is the only resource currently available that covers bioeffects and risk assessment of both extremely low frequency (ELF) fields and radiofrequency radiation (RFR) along with the recent developments in thermal therapy and imaging techniques.

With rapid technological advances in both sensor and processing technologies, a book can only capture the current process and result. However, the numerous mathematical techniques provided in this book have lasting value, giving it a useful role for many years to come. While the majority of remote sensing titles cover only image processing, this book focuses on the data acquisitions segment of remote sensing. Its uniquely specific and practical approach allows you to directly apply the knowledge in this book to your field of remote sensing applications.

Encompassing the work of the world’s foremost experts in their respective specialties, Sensors, Nanoscience, Biomedical Engineering, and Instruments features the latest developments, the broadest scope of coverage, and new material on multisensor data fusion and MEMS and NEMS.

Drawing on its distinguished editors and world-renowned contributors, this one-of-a-kind handbook serves as the ultimate reference on RFID, from basic research concepts to future applications.

Stochastic Hybrid Systems achieves an ideal balance between a theoretical treatment of SHS and practical considerations. The book skillfully explores the interaction of physical processes with computerized equipment in an uncertain environment, enabling a better understanding of sophisticated as well as everyday devices and processes.

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as  optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume covers SiGe circuit applications in the real world. Edited by John D. Cressler, with contributions from leading experts in the field, this book presents a broad overview of the merits of SiGe for emerging communications systems. Coverage spans new techniques for improved LNA design, RF to millimeter-wave IC design, SiGe MMICs, SiGe Millimeter-Wave ICs, and wireless building blocks using SiGe HBTs. The book provides a glimpse into the future, as envisioned by industry leaders.

Updated chapters include new material on such technologies as MEMS, device packaging, surface acoustic wave (SAW) filters, bipolar junction and heterojunction transistors, and high mobility electron transistors (HMETs). The book also features a completely rewritten section on wide bandgap transistors.

Encompassing the work of the world’s foremost experts in their respective specialties, Electronics, Power Electronics, Optoelectronics, Microwaves, Electromagnetics, and Radar features the latest developments, the broadest scope of coverage, and new material in emerging areas.

The unique behavior and requirements associated with RF and microwave systems establishes a need for unique and complex models and simulation tools. The required toolset for a microwave circuit designer includes unique device models, both 2D and 3D electromagnetic simulators, as well as frequency domain based small signal and large signal circuit and system simulators. This unique suite of tools requires a design procedure that is also distinctive. This book examines not only the distinct design tools of the microwave circuit designer, but also the design procedures that must be followed to use them effectively.

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology. It has been carefully designed to provide a useful basis of comparison for the current status and future course of the global industry. In addition to the copious technical material and the numerous references contained in each chapter, the book includes easy-to-reference appendices on the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

The three authors draw on a range of diverse backgrounds including working as a maritime surveyor, transport consultant, human factors lecturer, and mechanical engineer. They have undertaken maritime research in Denmark, Australia, Malta, and the UK. They have published several other human factor books on related topics. This combination of human factors knowledge, maritime wisdom, and substantial publication experience results in a book that is effective and practical.